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MUBW 6-06 A6
Output Inverter T1 - T6, D1 - D6
Symbol
Conditions
Maximum Ratings
V CES
V CGR
V GE
I C
T VJ = 25°C
T VJ = 25°C; R GE = 20k W
T VJ = 25°C
T C = 25°C
T C = 90°C
600
600
±20
7
4.5
V
V
V
A
A
I CM
t p = 1 ms = 1% duty cycle;
T C = 25°C
T C = 90°C
14
9
A
A
t SC
IGBT V CE = 600 V; T VJ = 125°C
non-repetitive
10
μs
P tot
T VJ
T VJ
T C = 25°C
Free-Wheeling Diode
IGBT
38
+150
+150
W
°C
°C
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
I CES
I GES
V GE = 0 V; V CE = 600 V
V CE = 0 V; V GE = 25 V
10
100
μA
nA
V GE(th)
V (BR)CES
V CE(sat)
V GE = V CE ; I C = 0.2 mA
V GE = 0 V; I C = 0.5 mA; T VJ = -40°C
V GE = 15 V; I C = 4 A; T VJ = 25°C
3
600
4
2.0
5
2.5
V
V
V
t f
T VJ = 150°C
2.3
100
2.8
150
V
ns
t r
t d(on)
t d(off)
E off
E on
C iss
C oss
C rss
Inductive load, T VJ = 150°C
V CC = 400 V; I C = 4 A
R G = 50 W ; V GE = ±15 V
V GE = 0 V
V CE = 25 V
f = 1 MHz
20
20
260
0.1
0.2
270
30
18
30
30
390
0.13
0.26
340
40
23
ns
ns
ns
mJ
mJ
pF
pF
pF
g fs
Q g
V F
t rr
V CE = 20 V; I C = 4 A
V CC = 400 V; I C = 6 A pulse; V GE = 15 V
I F = 10 A; V GE = 0 V; T VJ = 25°C
T VJ = 150°C
I F = 10 A; V R = -300 V; V GE = 0 V
0.8
3.2
24
2
1.8
0.2
S
n C
V
V
μs
di F /dt = -350 A/μs; T VJ = 100°C
Q r
I F = 10 A; V R = -300 V; T VJ = 25°C
0.3
μC
I r
di F /dt = -350 A/μs; V GE = 0 V; T VJ = 125°C
0.9
250
μC
μA
R thJC
IGBT
Diode
(per die)
(per die)
2.7
2.3
°C/W
°C/W
? 2000 IXYS All rights reserved
2-8
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